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2N3772

Microsemi Corporation

(2N3771 / 2N3772) NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices www.DataSheet4U.com Qualified ...


Microsemi Corporation

2N3772

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices www.DataSheet4U.com Qualified Level 2N3772 JANTX JANTXV 2N3771 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N3771 40 50 7.0 7.5 30 2N3772 60 100 7.0 5.0 20 Unit Vdc Vdc Vdc Adc Adc W W 0 C @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 34.2 mW/0C for TA > +250C 2) Derate linearly 857 mW/0C for TC > +250C 6.0 150 -65 to +200 TO-3* (TO-204AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBE = 100 Ω Collector-Emitter Breakdown Voltage IC = 200 mAdc, VBE = -1.5 Vdc Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 50 Vdc Emitter-Base Cutoff Current VBE = 7.0 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 50 Vdc VBE = 1.5 Vdc, VCE = 100 Vdc 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 V(BR)CEO 40 60 45 70 50 90 5.0 5.0 2.0 Vdc V(BR)CER Vdc V(BR)CEX Vdc ICEO mAdc IEBO mAdc ICEX 500 500 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3771, 2N3772 JAN SERI...




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