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AO4430L Dataheets PDF



Part Number AO4430L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel FET
Datasheet AO4430L DatasheetAO4430L Datasheet (PDF)

Rev 1: June 2004 AO4430, AO4430L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) The AO4430 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green .

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Rev 1: June 2004 AO4430, AO4430L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) The AO4430 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green Product) is offered in a lead free package. D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 18 15 80 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4430, AO4430L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A Static Drain-Source On-Resistance VGS=4.5V, ID=15A gFS VSD IS Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 80 4.7 6.5 6.2 82 0.7 1 4.5 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 638 355 0.45 103 VGS=10V, VDS=15V, ID=18A 48 18 15 12 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω IF=18A, dI/dt=100A/µs 8 51.5 8.8 33.5 22 5.5 8 7.5 1.8 Min 30 1 5 100 2.5 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.DataSheet4U.com Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4430, AO4430L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 50 3.5V 40 ID (A) 30 20 10 www.DataSheet4U.com 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 7.0 Normalized On-Resistance 6.5 VGS=4.5V 6.0 RDS(ON) (mΩ ) 5.5 5.0 4.5 4.0 3.5 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V 1.6 ID=18A 1.4 VGS=10V 1.2 VGS=4.5V ID(A) 40 125°C 30 20 25°C VGS=2.5V 10 0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 3.0V 4.5V 50 VDS=5V 60 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1.0E+02 1.0E+01 12 ID=18A RDS(ON) (mΩ ) 8 125°C IS (A) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 125°C 25°C 4 25°C 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4430, AO4430L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 VDS=15V ID=18A Capacitance (pF) 8000 Ciss 6000 4000 2000 Crss Coss www.DataSheet4U.com 0 0 20 40 60 80 100 120 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10ms 0.1s 1s 10s DC TJ(Max)=150°C TA=25°C 100µs 1ms 1.


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