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AO4420L Dataheets PDF



Part Number AO4420L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel FET
Datasheet AO4420L DatasheetAO4420L Datasheet (PDF)

Rev 4: Nov 2004 AO4420, AO4420L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. AO4420L is offered in a lead-free package. AO4420L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 13.7A RDS(ON) < 10.5.

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Rev 4: Nov 2004 AO4420, AO4420L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. AO4420L is offered in a lead-free package. AO4420L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 13.7A RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead PD TJ, TSTG Maximum 30 ±12 13.7 9.7 60 3.1 2 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 28 54 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4420, AO4420L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.DataSheet4U.com Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=13.7A TJ=125°C Min 30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance 0.004 1 5 100 2 10.5 15 12 1 5 µA nA V A 0.6 40 1.1 8.3 12.5 9.7 RDS(ON) gFS VSD IS mΩ mΩ S V A pF pF pF VGS=4.5V, ID=12.7A Forward Transconductance VDS=5V, ID=13.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 30 37 0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance 3656 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 256 168 0.86 30.5 4.6 8.6 5.5 3.4 49.8 5.9 22.5 12.5 4050 1.1 36 Ω nC nC nC ns ns ns ns ns nC SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=10V, VDS=15V, ID=13.7A VGS=10V, VDS=15V, RL=1.1Ω, RGEN=0Ω IF=13.7A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs 9 7 75 11 28 16 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4420, AO4420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID(A) ID(A) 30 20 10 VGS =2.0V 5 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS(Volts) Figure 1: On-Regions Characteristics VGS(Volts) Figure 2: Transfer Characteristics VGS =2.5V 30 VGS=5V 25 20 15 10 25°C 125°C www.DataSheet4U.com 0 12 Normalize ON-Resistance 11 RDS(ON)(mΩ ) 10 9 8 7 6 0 5 10 15 20 25 30 VGS =10V 1.8 ID=13.7A VGS =4.5V 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=10V ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON)(mΩ ) 20 15 10 5 0 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=13.7A 1E+01 1E+00 1E-01 IS(A) 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25°C 125°C 125°C 25°C Alpha & Omega Semiconductor, Ltd. AO4420, AO4420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS(Volts) 3 2 1 Crss VDS=15V ID=13.7A Capacitance (pF) 10000 Ciss 1000 Coss www.DataSheet4U.com0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 5 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10 ID(A) 10ms 1s 1 T J(Max) =150°C T A =25°C 0.1 0.1.


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