Document
Rev 4: Nov 2004
AO4420, AO4420L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. AO4420L is offered in a lead-free package. AO4420L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 13.7A RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead PD TJ, TSTG
Maximum 30 ±12 13.7 9.7 60 3.1 2 -55 to 150
Units V V A
W °C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 28 54 21
Max 40 75 30
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON)
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Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=13.7A TJ=125°C
Min 30
Typ
Max
Units V
Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance
0.004
1 5 100 2 10.5 15 12 1 5
µA nA V A
0.6 40
1.1 8.3 12.5 9.7
RDS(ON) gFS VSD IS
mΩ mΩ S V A pF pF pF
VGS=4.5V, ID=12.7A Forward Transconductance VDS=5V, ID=13.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
30
37 0.76
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance
3656 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 256 168 0.86 30.5 4.6 8.6 5.5 3.4 49.8 5.9 22.5 12.5
4050
1.1 36
Ω nC nC nC ns ns ns ns ns nC
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, ID=13.7A
VGS=10V, VDS=15V, RL=1.1Ω, RGEN=0Ω
IF=13.7A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs
9 7 75 11 28 16
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID(A) ID(A) 30 20 10 VGS =2.0V 5 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS(Volts) Figure 1: On-Regions Characteristics VGS(Volts) Figure 2: Transfer Characteristics VGS =2.5V 30 VGS=5V 25 20 15 10 25°C 125°C
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12 Normalize ON-Resistance 11 RDS(ON)(mΩ ) 10 9 8 7 6 0 5 10 15 20 25 30 VGS =10V
1.8 ID=13.7A VGS =4.5V 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=10V
ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30 25 RDS(ON)(mΩ ) 20 15 10 5 0 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=13.7A
1E+01 1E+00 1E-01 IS(A) 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25°C 125°C
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS(Volts) 3 2 1 Crss VDS=15V ID=13.7A Capacitance (pF) 10000 Ciss
1000 Coss
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0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics
100 0 5 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics
100 RDS(ON) limited 10 ID(A) 10ms 1s 1 T J(Max) =150°C T A =25°C 0.1 0.1.