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AO4418 Dataheets PDF



Part Number AO4418
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel FET
Datasheet AO4418 DatasheetAO4418 Datasheet (PDF)

AO4418 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SD SD SD GD S.

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AO4418 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain CurrentB ID IDM TA=25°C Power Dissipation TA=70°C Avalanche CurrentB Repetitive avalanche energy 0.3mHB PD IAR EAR Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±25 11.5 9.7 40 3 2.1 20 60 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-AmbientAF Maximum Junction-to-AmbientA Maximum Junction-to-LeadC t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Alpha & Omega Semiconductor, Ltd. Units V V A W A mJ °C Units °C/W °C/W °C/W www.aosmd.com AO4418 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=20V, ID=11.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=11.5A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=11.5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=100A/µs Min 30 1.5 40 14 0.3 Typ 2.4 9.8 14.2 12.3 32 22 0.76 758 180 128 0.7 16.6 8.6 2.5 4.9 5.4 5.1 14.4 3.7 16.9 6.6 Max Units V 1 5 µA 100 nA 3V A 14 18 mΩ 17 mΩ 40 mΩ S 1V 4.3 A 910 pF pF 180 pF 1.1 Ω 20 nC nC nC nC ns ns ns ns 22 ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev 6: July 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID (A) 50 45 10V 40 35 30 25 20 15 10 5 0 0 6V 7V 5V 3.5V VGS=3V 1234 VDS (Volts) Fig 1: On-Region Characteristics 5 ID(A) 30 25 20 15 10 5 0 2 VDS=5V 125°C 25°C 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 5.5 RDS(ON) (mΩ) 45 40 35 VGS=4.5V 30 25 20 15 10 5 0 VGS=10V VGS=20V 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 1.8 1.6 ID=10A VGS=10V 1.4 VGS=20V 1.2 1 0.8 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 175 RDS(ON) (mΩ) 60 50 40 ID=10A 30 125°C 20 10 25°C 0 0 5 10 15 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125°C 25°C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VGS (Volts) 10 8 6 4 2 0 0 VDS=15V ID=11.5A 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 20 .


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