Document
AO4418 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
SD SD SD GD
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain CurrentB
ID IDM
TA=25°C Power Dissipation TA=70°C Avalanche CurrentB Repetitive avalanche energy 0.3mHB
PD
IAR EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±25 11.5 9.7 40 3 2.1 20 60
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-AmbientAF Maximum Junction-to-AmbientA Maximum Junction-to-LeadC
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75 24
Alpha & Omega Semiconductor, Ltd.
Units V V
A
W A mJ °C
Units °C/W °C/W °C/W
www.aosmd.com
AO4418
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=20V, ID=11.5A
RDS(ON)
gFS VSD IS
Static Drain-Source On-Resistance
VGS=10V, ID=10A
VGS=4.5V, ID=5A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=11.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr tD(off)
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=11.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=100A/µs
Min 30 1.5 40
14
0.3
Typ
2.4
9.8 14.2 12.3 32 22 0.76
758 180 128 0.7
16.6 8.6 2.5 4.9 5.4 5.1 14.4 3.7 16.9 6.6
Max Units
V
1 5
µA
100 nA
3V
A
14 18
mΩ
17 mΩ
40 mΩ
S
1V
4.3 A
910 pF pF
180 pF 1.1 Ω
20 nC nC nC nC ns ns ns ns
22 ns nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev 6: July 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID (A)
50 45 10V 40 35 30 25 20 15 10
5 0
0
6V 7V
5V
3.5V
VGS=3V
1234 VDS (Volts)
Fig 1: On-Region Characteristics
5
ID(A)
30 25 20 15 10
5 0
2
VDS=5V
125°C 25°C
2.5 3 3.5 4 4.5 5 VGS(Volts)
Figure 2: Transfer Characteristics
5.5
RDS(ON) (mΩ)
45
40 35 VGS=4.5V
30
25
20
15
10
5 0
VGS=10V VGS=20V
5 10 15 20 25 30
ID (A) Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
1.8
1.6
ID=10A
VGS=10V
1.4 VGS=20V
1.2
1
0.8 0
25 50 75 100 125 150
Temperature (°C) Figure 4: On-Resistance vs. Junction
Temperature
175
RDS(ON) (mΩ)
60
50
40 ID=10A
30 125°C
20
10 25°C
0 0 5 10 15 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
IS (A)
1.0E+01
1.0E+00
1.0E-01 1.0E-02 1.0E-03
125°C
25°C
1.0E-04
1.0E-05 0.0
0.2 0.4 0.6 0.8
VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VGS (Volts)
10 8 6 4 2 0 0
VDS=15V ID=11.5A
4 8 12 16
Qg (nC) Figure 7: Gate-Charge Characteristics
20
.