30V N-Channel MOSFET
AO4404B
30V N-Channel MOSFET
General Description
Product Summary
The AO4404B uses advanced trench technology to provi...
Description
AO4404B
30V N-Channel MOSFET
General Description
Product Summary
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V)
100% UIS Tested 100% Rg Tested
30V 8.5A < 24mΩ < 30mΩ < 48mΩ
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum 30 ±12 8.5 7.1 60 14 10 3.1 2
-55 to 150
S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units V V
A
A mJ W °C
Units °C/W °C/W °C/W
Rev 3: Dec 2011
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AO4404B
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
IGSS VGS(th) ID(ON)
Gate-Body leakage curr...
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