N-channel Power MOSFET
STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second ge...
Description
STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
Features
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Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V
RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω
ID
3
3 2 1
1 2
STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N
7A 7A 7 A(1) 7A
IPAK
TO-220
1. Limited only by maximum temperature allowed ■ ■ ■
3 1
1 3 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
DPAK
TO-220FP
Application
■
Figure 1.
Internal schematic diagram
Switching applications
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking D8NM60N D8NM60N-1 F8NM60N P8NM60N Package DPAK IPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube
Order code STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N
January 2008
Rev 2
1/17
www.st.com 17
Contents
STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .............
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