Dual N-Channel 40-V (D-S) MOSFET
Si4908DY
New Product
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
FEATURES
ID (A)a
5....
Description
Si4908DY
New Product
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
FEATURES
ID (A)a
5.0 4.7 56 5.6
rDS(on) (W)
0.060 at VGS = 10 V 0.070 at VGS = 4.5 V
Qg (Typ)
D TrenchFETr Power MOSFET D 100 % Rg Tested
APPLICATIONS
D CCFL Inverter
D1 D2
RoHS
COMPLIANT
www.DataSheet4U.com
S1 G1 S2 G2 1 2 3 4
SO-8
8 7 6 5 Top View Ordering Information: Si4908DY-T1–E3 (Lead (Pb)–free) S1 N-Channel MOSFET S2 N-Channel MOSFET D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current (10 ms Pulse Width) Source Drain Current Diode Current Source-Drain Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L=0 0.1 1 mH TC= 25 _C Maximum Power Dissipation TC= 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS ISM IAS EAS ID
Symbol
VDS VGS
Limit
40 "16 5 4.7 4.1b, c 3.3b, c 20 2.3 1.5b, c 20 7 2.5 2.75 1.75 1.85b, c 1.18b, c –55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes a. Based on TC = 25 _C. b. Surface Mounted on 1” x 1” FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 120 _C/W. Document Number: 73698 S–60218—Rev. A, 20-Feb-06 www.vishay.com t v 10 sec Steady-State
S...
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