Ordering number : ENN7614
2SC5967
NPN Triple Diffused Planar Silicon Transistor
2SC5967
Ultrahigh-Definition CRT Displ...
Ordering number : ENN7614
2SC5967
NPN Triple Diffused Planar Silicon
Transistor
2SC5967
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. www.DataSheet4U.com
Package Dimensions
unit : mm 2048B
[2SC5967]
6.0
20.0
3.3
5.0
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
5.45
5.45
Ratings 1700 800 5 20 40 3.5 180 150 --55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1700V, RBE=0 IC=10mA, RBE=∞ VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in...
