SMB60N03-10L

SMB60N03-10L N-Channel Enhancement-Mode MOSFETs, Logic Level Product Summary V(BR)DSS (V) 30 rDS(on) (W) 0.01 @ VGS = 10 V ID (A)a 60 D www.DataSheet4U.com TO-263 G G D S Top View S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Currentb Repetitive Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) L = 0.1 mH L = 0.05 mH TC = 25_C TC = 100_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAS EAR PD TJ, Tstg TL Limit 30 "20 60 51 240 60 60 180 90 125 62a –55 to 175 300 Unit V A mJ W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Notes: a. Package Limited b. Duty Cycle v 1% Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70269. Symbol RthJA RthJC Limit 80 1.2 Unit _C/W Siliconix S-49520—Rev. C, 18-Dec-96 1 SMB60N03-10L Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current www.DataSheet4U.com On-State Drain Currentb ID(on) ...