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LH51BV1000J Dataheets PDF



Part Number LH51BV1000J
Manufacturers Sharp Electrionic Components
Logo Sharp Electrionic Components
Description CMOS 1M (128K x 8) Static Ram
Datasheet LH51BV1000J DatasheetLH51BV1000J Datasheet (PDF)

LH51BV1000J FEATURES • Access time: 70 ns (MAX.) • Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.) • Data Retention: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C) • Single power supply: 2.7 V to 3.6 V • Operating temperature: -25°C to +85°C • Fully-static operation • Three-state output • Not designed or rated as radiation hardened • Package: 32-pin 6 × 10 mm CSP • N-type bulk silicon DESCRIPTION The LH51BV1000JY is a static RAM organized as 131,072 × 8 b.

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