SPD07N60C2

Final data SPD07N60C2 SPU07N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO-251 and TO-252 Ultra low gate charge www.DataSheet4U.com Product Summary VDS RDS(on) ID P-TO251 600 0.6 7.3 P-TO252 V Ω A Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Type SPD07N60C2 SPU07N60C2 Package P-TO252 P-TO251 Ordering Code Q67040-S4312 Q67040-S4311 Marking 07N60C2 07N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 7.3 4.6 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 14.6 230 0.5 7.3 6 ±20 83 -55... +150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =7.3A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =7.3A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case www.DataSheet4U.com SPD07N60C2 SPU07N60C2 Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 1.5 75 75 50 0.66 260 Unit K/W Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linea...