SPU07N20

Preliminary Data SIPMOS® Power Transistor Features N channel SPD 07N20 VDS RDS(on) ID 200 0.4 7 V Ω A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Enhancement mode rated Avalanche rated dv/dt www.DataSheet4U.com Type SPD07N20 SPU07N20 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4120-A2 Tape and Reel Q67040-S4112-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Value 7 4.5 28 120 4 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 7 A, V DS = 160 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 40 -55... +175 55/150/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD 07N20 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded www.DataSheet4U.com Symbol min. Values typ. max. 3.1 100 75 50 Unit RthJC RthJA RthJA - K/W SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol mi...