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HAT2199R

Renesas Technology
Part Number HAT2199R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT2199R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive ...
Datasheet PDF File HAT2199R PDF File

HAT2199R
HAT2199R

Overview
HAT2199R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 13.
0 mΩ typ.
(at VGS = 10 V) Outline SOP-8 8 7 65 4 G 1 234 56 7 8 DD D D SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0063-0300 Rev.
3.
00 Sep.
23.
2004 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance IDR IAP Note 2 EAR Not...


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