HAT2132H

HAT2132H Silicon N Channel MOS FET High Speed Power Switching Features Low drive current. Low on-resistance Low profile Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK ) 5 4 G 1 234 5 D S SS 1 23 REJ03G0177-0300 Rev.3.00 Dec 07, 2006 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IDR(pulse) Note1 IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 6 24 6 24 6 2.4 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.3.00 Dec 07, 2006 page 1 of 6 HAT2132H Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 200 Zero gate voltage drain current IDSS — Gate to source leak current IGSS — Gate to source cutoff voltage VGS(off) 3.0 Forward transfer admittance |yfs| 2.7 Static drain to source on state resistance RDS(on) — Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Total gate charge Qg — Gate...