HAT2116H
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS (on) = 6.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1234
5 D
S SS 1 23
REJ03G1189-0400 (Previous: ADE-208-1575B)
Rev.4.00 Sep 07, 2005
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