HAT2099H
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS (on) = 2.9 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1234
5 D
S SS 1 23
REJ03G1187-0500 (Previous: ADE-208-1432C)
Rev.5.00 Sep 07, 2005
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