Silicon N-Channel Power MOSFET
HAT2089R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High d...
Description
HAT2089R
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1234
5678 DDDD
SSS 123
REJ03G1184-0200 (Previous: ADE-208-1235)
Rev.2.00 Sep 07, 2005
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.2.00 Sep 07, 2005 page 1 of 3
HAT2089R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
250
VGSS
±30
Drain current Drain peak current
ID
2
ID (pulse) Note 1
16
Body to drain diode reverse drain current
IDR
2
Channel dissipation
Pch Note 2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C) Unit
V V A A A W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body to drain diode forward voltage Body to drain diode reverse recovery time
Note: 3. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS IGSS IDSS
VGS (off) RDS (on)
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