HAT2087R Datasheet PDF - Renesas Technology

HAT2087R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High d...

HAT2087R Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 1234 4 G 5678 DDDD SSS 123 REJ03G1182-0300 Rev.3.00 Feb 06, 2009 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Absolute Maximum Ratings Item Symbol Value Drain to source voltage VDSS 250 Gate to source voltage VGSS ±30 Drain current Drain peak current ID ID (pulse) Note 1 2.5 20 Body to drain diode reverse drain current Channel dissipation IDR Pch Note 2 2.5 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C REJ03G1182-0300 Feb 06, 2009 Page 1 of 6 HAT2087R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Gate to source leak current V (BR) DSS 250 — — IGSS — — ±0.1 Zero gate voltage drain current IDSS —— 1 Gate to source cutoff voltage VGS (off) 3.0 — 4.5 Static drain to source on state resistance RDS (on) — 0.24 0.31 Forward transfer admittance |yfs| 2.1 3.5 — Input capacitance Ciss — 830 — Output capacitance Coss — 105 — Reverse transfer capacitance Crss — 21 — V ID = 10 mA, VGS = 0 µA VGS = ±30 V, VDS = 0 µA VDS = 250 V, VGS = 0 V ID = 1 mA, VDS = 10 V Ω ID = 1.25 A, VGS = 10...