CMOS 16K (2K x 8) Static RAM
LH5116/H
FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 220 mW (MAX....
Description
LH5116/H
FEATURES 2,048 × 8 bit organization Access time: 100 ns (MAX.) Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 µW (MAX.) Single +5 V power supply Fully-static operation TTL compatible I/O Three-state outputs Wide temperature range available LH5116H: -40 to +85°C Packages: 24-pin, 600-mil DIP 24-pin, 300-mil SK-DIP 24-pin, 450-mil SOP
CMOS 16K (2K × 8) Static RAM
DESCRIPTION
The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).
PIN CONNECTIONS
24-PIN DIP 24-PIN SK-DIP 24-PIN SOP A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 GND TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A8 A9 WE OE A10 CE I/O8 I/O7 I/O6 I/O5 I/O4
5116-1
Figure 1. Pin Connections for DIP, SK-DIP, and SOP Packages
1
LH5116/H
CMOS 16K (2K × 8) Static RAM
ROW DECODERS
ROW ADDRESS BUFFERS
A0 8 A5 3 A6 2 A7 1 A8 23 A9 22 A10 19 I/O1 9 I/O2 10 I/O3 11 I/O4 13 I/O5 14 I/O6 15 I/O7 16 I/O8 17
MEMORY CELL ARRAY (128 x128)
24 VCC 12 GND
CE
DATA CONTROL
COLUMN I/O CIRCUIT
COLUMN DECODERS
COLUMN ADDRESS BUFFERS CE
CE 18 WE 21 OE 20 4 A4 5 A3 6 A2 7 A1
5116-2
Figure 2. LH5116/H Block Diagram
PIN DESCRIPTION
SIGNAL PIN NAME SIGNAL PIN NAME
A0 - A10 CE OE WE
Address input Chip Enable input Output Enable input Write Enable input
I/O1 - I/O8 VCC GND
Data input/output Power supply Ground
TRUTH TABLE
CE OE WE MOD...
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