HAT1139H
Silicon P Channel Power MOS FET Power Switching
Features
Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 7.0 mΩ typ. (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5
5
5
D
D
1 234
2
3
G
G
S
S
1
4
REJ03G1244-0200 Rev.2.00
Jun.22.2005
1, 4 Sour...
