HAT1127H
Silicon P Channel Power MOS FET Power Switching
Features
Capable of –4.5 V gate drive Low drive current High density mounting Ultra Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1 234
5 D
SSS 123
REJ03G1330-0500 Rev.5.00
Jan 20, 2006
1, 2, 3 4 5
Source Gate...
