HAT1126RJ

HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Features Low on-resistance Capable of 4.5 V gate drive www.DataSheet4U.com High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R –60 ±20 –6.0 –48 HAT1126RJ –60 ±20 –6.0 –48 Unit V V A A A mJ W W °C °C Avalanche current IAPNote4 — –6.0 Note4 Avalanche energy EAR — 3.08 Channel dissipation PchNote2 2 2 Channel dissipation PchNote3 3 3 Channel temperature Tch 150 150 Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00 Sep. 10, 2004 page 1 of 7 HAT1126R, HAT1126RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min –60 ±20 — — — — –1.0 4.0 — — — — — — — — — — — — — — Typ — — — — — — — 7.0 40 60 2300 230 140 37 6.5 8 20 15 55 10 –0.85 30 Max — — –1 — –10 ±10 –2.5 — 50 85 — — — — — — — — — — –1.1 — Unit V V µA µA µ...