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HAT1111C

Part Number	HAT1111C
Manufacturer	Renesas Technology
Description	Silicon P-Channel Power MOSFET
Published	Nov 20, 2008
Detailed Description	HAT1111C Silicon P Channel MOS FET Power Switching REJ03G0446-0600 Rev.6.00 May 19.2005 Features • Low on-resistance RD...
Datasheet	HAT1111C PDF File

Overview

HAT1111C Silicon P Channel MOS FET Power Switching REJ03G0446-0600 Rev.
6.
00 May 19.
2005 Features • Low on-resistance RDS(on) = 245 mΩ typ.
(at VGS = –10 V) com • Low drive current.
• 4.
5 V gate drive devices.
• High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2 3 4 5 DDD D 6 G 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID (pulse)Note1 IDR PchNote 2 Ratings –60 –20 / +10 –2 –8 –2 1.
25 Unit V V...

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