HAT1055RJ

HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Rev.1.00, Aug.29.2003, page 1 of 9 HAT1055R, HAT1055RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HAT1055R Drain to source voltage Gate to source voltage Drain current www.DataSheet4U.com Unit HAT1055RJ –60 ±20 –5 –40 –5 2.14 2 3 150 –55 to +150 V V A A A mJ W W °C °C VDSS VGSS ID ID (pulse) IAP Note4 Note4 EAR Note1 –60 ±20 –5 –40 — — 2 3 150 –55 to +150 Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Pch Note2 PchNote3 Tch Tstg PW ≤ 10µs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.29.2003, page 2 of 9 HAT1055R, HAT1055RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS –60 Typ — — — — — — — 5 60 90 1350 135 85 21 3 4 20 15 55 10 –0.85 25 Max — — –1 — –10 ±10 –2.5 — 76 130 — — — — — — —...