H7N0603DL

H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0200 Rev.2.00 Jan.26.2005 Features Low on - resistance RDS (on) = 11 mΩ typ. www.DataSheet4U.com Low drive current Capable of 4.5 gate drive Outline PRSS0004ZD-B (Previous code: DPAK(L)-2) D 4 PRSS0004ZD-C (Previous code: DPAK-(S)) 4 G 1 2 3 1. Gate 2. Drain 3. Source 4. Drain H7N0603DS S 1 2 3 H7N0603DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Tch = 25°C, Rg ≥ 50Ω Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Ratings 60 ±20 30 120 30 25 53.6 40 150 –55 to +150 Unit V V A A A A mJ W °C °C Rev.2.00, Jan.26.2005, page 1 of 8 H7N0603DL, H7N0603DS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer capacitance Input capacitance www.DataSheet4U.com Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time fall time Body - drain diode forward voltage Body – drain diode reverse recov...