Document
H7N0405LD, H7N0405LS, H7N0405LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1367-0100 Rev.1.00 Sep 25, 2006
Features
• Low on-resistance RDS(on) = 4.0 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1 1 2 3
2
1. Gate 2. Drain 3. Source 4. Drain
3
H7N0405LD
H7N0405LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4 G
D
1
2
3
S
H7N0405LM
Rev.1.00 Sep 25, 2006 page 1 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Rating 40 ±20 80 320 80 40 213 80 150 –55 to +150 Unit V V A A A A mJ W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source break down voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cut off voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer admittance Total gate charge Gate to source charge Gate to drain charge Turn-off delay time Rise time Body-drain diode forward voltage Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 ±20 — — 1.5 — — 54 — — — — — — — — — — — — Typ — — — — — 4.0 6.2 90 5600 825 550 100 25 25 40 400 100 26 0.94 40 Max — — ±10 10 2.5 5.0 8.7 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 ID = 1 mA, VDS = 10 VNote4 ID = 40 A, VGS = 10 VNote4 ID = 40 A, VGS = 4.5 VNote4 ID = 40 A, VGS = 10 VNote4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 80 A VGS = 10 V, ID = 40 A, RL = 0.75 Ω, Rg = 4.7 Ω
IF = 80 A, VGS = 0 IF = 80 A, VGS = 0 diF/dt = 100 A/µs
Rev.1.00 Sep 25, 2006 page 2 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Main Characteristics
Power vs. Temperature Derating
160 1000 300 120
10
Maximum Safe Operation Area
10
0µ s
Channel Dissipation Pch (W)
µs
Drain Current ID (A)
100 30
1 m
10 3 1 0.3 0.1 0.03
80
DC Operation (Tc = 25°C)
s
40
Operation in this area is limited by RDS(on)
PW = 10 ms (1 shot)
www.DataSheet4U.com
0
50
100
150
200
Ta = 25°C 0.01 0.1 0.3 1
3
10
30
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100 6V 10 V 4.0 V 60 4.4 V 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
80
80
60
40 VGS = 3.6 V Pulse Test 0 2 4 6 8 10
40 –40°C 25°C Tc = 150°C 0 1 2 3 4 5
20
20
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (mΩ)
100 Pulse Test 30
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance RDS(on) (mΩ)
Static Drain to Source on State Resistance vs. Temperature
15 Pulse Test
10
10, 20, 50 A
10
VGS = 4.5 V
4.5 V 5 10, 20, 50 A VGS = 10 V 0 –50 0 50 100 150
3
10 V
1 1 3 10 30 100
Drain Current ID (A)
Case Temperature Tc (°C)
Rev.1.00 Sep 25, 2006 page 3 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Typical Capacitance vs. Drain to Source Voltage
10000 3000
Dynamic Input Characteristics
100
Drain to Source Voltage VDS (V)
Capacitance C (pF)
80 VDD = 40 V 25 V 10 V VDS
VGS
16
1000 Coss 300 100 30 V = 0 GS f = 1 MHz 10 0 10 Crss
60
12
40
8
20
www.DataSheet4U.com
VDD = 40 V 25 V 10 V 40 80 120 160
4 0 200
20
30
40
50
0
Drain to Source Voltage VDS (V)
Gate Charge Qg (nc)
Reverse Drain Current vs. Source to Drain Voltage
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
100
250 IAP = 40 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω
Reverse Drain Current IDR (A)
80
10 V
200
60 5V 40 VGS = 0, –5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
150
100
20
50 0 25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25°C
1
D=1 0.5
0.3 0.2
0.1
0.1
0.05 2 0.0
θch - c(t) = γs (t) • θch - c θch - c = 1.56°C/ W, Tc = 25°C
0.03
1 0.0
h 1s
0.01 10 µ
ot
p
e uls
PDM PW T
D=
PW T
100 µ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Rev.1.00 Sep 25, 2006 page 4 of 7
Gate to Source Voltage VGS (V)
Ciss
ID = 80 A
20
H7N0405LD,.