Silicon N-Channel MOSFET
H7N0310LD, H7N0310LS, H7N0310LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1125-0500 (Previous: ADE-208-...
Description
H7N0310LD, H7N0310LS, H7N0310LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1125-0500 (Previous: ADE-208-1422C) Rev.5.00 Apr 07, 2006
Features
www.DataSheet4U.com R
Low on-resistance DS (on) = 8 mΩ typ. Low drive current
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
4
1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1
2
1
3
2
3
H7N0310LD
H7N0310LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4
G
D
1
2
3
S
H7N0310LM
Rev.5.00 Apr 07, 2006 page 1 of 7
H7N0310LD, H7N0310LS, H7N0310LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature
www.DataSheet4U.com Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 30 ±20 30 120 30 50 2.5 150 –55 to +150
Unit V V A A A W °C/W °C °C
Pch θ ch-c Tch Tstg
Note 2
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to ...
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