H5N2512CF

H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features Low on-resistance Low leakage current www.DataSheet4U.com High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) IDR Note 1 IDR(pulse) Note 3 IAP Pch Note 2 θch-c Tch Tstg Note 1 Ratings 250 ±30 18 72 18 72 18 35 3.57 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Rev.1.00, Nov.26.2004, page 1 of 3 H5N2512CF Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance www.DataSheet4U.com Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body–drain diode forward voltage Body–drain diode reverse recovery time Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(...