DatasheetsPDF.com

H5N2508DS Dataheets PDF



Part Number H5N2508DS
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet H5N2508DS DatasheetH5N2508DS Datasheet (PDF)

H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name:.

  H5N2508DS   H5N2508DS



Document
H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 H5N2508DL, H5N2508DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance www.DataSheet4U.com Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±30 7 28 7 28 7 30 4.17 150 –55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 3.0 — 3.0 — — — — — — — — — — — — — Typ — — — — 0.48 5.0 450 60 12 19 14 47 11 13 2.5 6 0.9 100 0.38 Max — ±0.1 1 4.5 0.63 — — — — — — — — — — — 1.4 — — Unit V µA µA V Ω S pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions ID = 10 mA, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 3.5 A, VGS = 10 V ID = 3.5 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz Note 4 VDD = 125 V, ID = 3.5 A VGS = 10 V RL = 35.7 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 7 A IF = 7 A, VGS = 0 IF = 7 A, VGS = 0 diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 7 H5N2508DL, H5N2508DS Main Characteristics Power vs. Temperature Derating Pch (W) 40 100 30 10 s Maximum Safe Operation Area ID (A) 30 Channel Dissipation 20 Drain Current =1 10 0m 0µ DC 3 s s( 1s Op h er o t ) ati 1 on (T c= 25 0.3 °C ) Operation in 10 PW 1m µs 10 www.DataSheet4U.com 0 0 50 100 150 200 0.1 this area is limited by RDS(on) 0.03 Ta = 25°C 0.01 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V Pulse Test 8V 6V 6 10 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 8 8 6 5.5 V Drain Current 4 5V VGS = 4.5 V 0 0 4 8 12 16 20 4 Tc = 75°C 25°C 2 2 –25°C 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 10 Pulse Test 8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) 2 Pulse Test 1 6 ID = 7 A 0.5 VGS = 10 V 4 2 0.2 3A 1A 0 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 7 H5N2508DL, H5N2508DS Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 2.0 100 50 20 10 5 2 1 0.5 0.2 0.02 0.05 0.1 0.2 75°C Tc = –25°C 25°C VDS = 10 V Pulse Test Pulse Test VGS = 10 V Static Drain to Source on State Resistance RDS(on) (Ω) Forward Transfer Admittance vs. Drain Current 1.6 1.2 ID = 7 A 0.8 3A 0.4 1A www.DataSheet4U.com 0 –40 0 40 80 120 160 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 1000 Typical Capacitance vs. Drain to Source Voltage 5000 2000 VGS = 0 f = 1 MHz Ciss Reverse Recovery Time trr (ns) 500 di / dt = 100 A / µs VGS = 0, Ta = 25°C Capacitance C (pF) 1000 500 200 100 50 20 10 5 Crss 0 20 40 60 80 100 Coss 200 100 50 20 10 0.2 0.5 1 2 5 10 20 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) VGS (V) 500 ID = 7 A 400 VDD = 50 V 100 V 200 V VDS Switching Characteristics 20 1000 VGS = 10 V, VDD = 125 V PW = 10 µs, duty ≤ 1 % RG = 10 Ω 100 td(off) td(on) 10 tr tf 16 Drain to Source Voltage 300 12 200 8 100 0 0 VDD = 200 V 100 V 50 V 4 8 12 16 20 4 0 Gate to Sou.


H5N2508DL H5N2508DS H5N2510DL


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)