Document
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005
Features
www.DataSheet4U.com • Low
• Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A) • Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
H5N2508DL, H5N2508DS
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance
www.DataSheet4U.com Channel temperature
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 250 ±30 7 28 7 28 7 30 4.17 150 –55 to +150
Unit V V A A A A A W °C/W °C °C
IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg
Note 1
Note 2
Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 3.0 — 3.0 — — — — — — — — — — — — — Typ — — — — 0.48 5.0 450 60 12 19 14 47 11 13 2.5 6 0.9 100 0.38 Max — ±0.1 1 4.5 0.63 — — — — — — — — — — — 1.4 — — Unit V µA µA V Ω S pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions ID = 10 mA, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 3.5 A, VGS = 10 V ID = 3.5 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz
Note 4
VDD = 125 V, ID = 3.5 A VGS = 10 V RL = 35.7 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 7 A IF = 7 A, VGS = 0 IF = 7 A, VGS = 0 diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
H5N2508DL, H5N2508DS
Main Characteristics
Power vs. Temperature Derating
Pch (W)
40 100 30
10 s
Maximum Safe Operation Area
ID (A)
30
Channel Dissipation
20
Drain Current
=1 10 0m 0µ DC 3 s s( 1s Op h er o t ) ati 1 on (T c= 25 0.3 °C ) Operation in
10
PW
1m
µs
10
www.DataSheet4U.com
0 0 50 100 150 200
0.1 this area is limited by RDS(on) 0.03 Ta = 25°C 0.01 1 3 10 30
100
300
1000
Case Temperature
Tc (°C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
10 10 V Pulse Test 8V 6V 6 10
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
8
8
6 5.5 V
Drain Current
4 5V VGS = 4.5 V 0 0 4 8 12 16 20
4 Tc = 75°C
25°C
2
2
–25°C 0
0
2
4
6
8
10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V)
10 Pulse Test 8
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) (Ω)
2 Pulse Test 1
6 ID = 7 A
0.5
VGS = 10 V
4
2
0.2
3A 1A
0 0 4 8 12 16 20
0.1 0.2
0.5
1
2
5
10
20
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
H5N2508DL, H5N2508DS
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
2.0 100 50 20 10 5 2 1 0.5 0.2 0.02 0.05 0.1 0.2 75°C Tc = –25°C 25°C VDS = 10 V Pulse Test Pulse Test VGS = 10 V
Static Drain to Source on State Resistance RDS(on) (Ω)
Forward Transfer Admittance vs. Drain Current
1.6
1.2
ID = 7 A
0.8 3A 0.4 1A
www.DataSheet4U.com
0 –40
0
40
80
120
160
0.5
1
2
5
10
Case Temperature
Tc (°C)
Drain Current
ID (A)
Body-Drain Diode Reverse Recovery Time
1000
Typical Capacitance vs. Drain to Source Voltage
5000 2000 VGS = 0 f = 1 MHz Ciss
Reverse Recovery Time trr (ns)
500
di / dt = 100 A / µs VGS = 0, Ta = 25°C
Capacitance C (pF)
1000 500 200 100 50 20 10 5 Crss 0 20 40 60 80 100 Coss
200 100 50
20 10 0.2
0.5
1
2
5
10
20
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V) VGS (V)
500 ID = 7 A 400 VDD = 50 V 100 V 200 V
VDS
Switching Characteristics
20 1000 VGS = 10 V, VDD = 125 V PW = 10 µs, duty ≤ 1 % RG = 10 Ω 100 td(off) td(on) 10 tr tf
16
Drain to Source Voltage
300
12
200
8
100
0 0
VDD = 200 V 100 V 50 V 4 8 12 16 20
4
0
Gate to Sou.