DatasheetsPDF.com
H5N2503P
Silicon N Channel MOS FET High Speed Power Switching
Description
H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com Low Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) Low gate charge: Qg ...
Renesas Technology
Download H5N2503P Datasheet
Similar Datasheet
H5N2501LD
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2501LM
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2501LS
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2502CF
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2503P
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2504DL
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2504DS
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2505DL
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2505DS
Silicon N Channel MOS FET High Speed Power Switching
- Renesas Technology
H5N2507P
High Speed Power Switching MOSFET
- Renesas Technology
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)