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H5N2502CF

Renesas Technology
Part Number H5N2502CF
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N2502CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0480-0100 Rev.1.00 Nov.26.2004 Features • Low on-r...
Datasheet PDF File H5N2502CF PDF File

H5N2502CF
H5N2502CF

Overview
H5N2502CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0480-0100 Rev.
1.
00 Nov.
26.
2004 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High Speed Switching Outline TO-220CFM D G 1.
Gate 2.
Drain 3.
Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IDR(pulse...


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