H7N1005LD

H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 Features Low on-resistance RDS (on) = 85 mΩ typ. www.DataSheet4U.com Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H7N1005LD H7N1005LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N1005LM Rev.2.00 Oct 16, 2006 page 1 of 8 H7N1005LD, H7N1005LS, H7N1005LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.com Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 100 ±20 15 30 30 8 6.4 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tota...