H7N1002AB

H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features Low on-resistance RDS(on) = 8 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2.00, Oct.30.2003, page 2 of 9 H7N1002AB Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 Typ — — — — — 8 10 95 9700 740 330 155 35 33 43 245 130 25 0.93 70 Max — — ±10 10 2.5 10 15 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/ dt = 100 A/µs Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 VNote1 ID = 37.5 A, VGS = 10 VNote1 ID = 37.5 A, VGS = 4.5 VNote1 ID = 37.5 A, VDS = 10 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 75 A VGS ...