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H7P0601DS

Renesas Technology
Part Number H7P0601DS
Manufacturer Renesas Technology
Description Silicon P Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 www.Data...
Datasheet PDF File H7P0601DS PDF File

H7P0601DS
H7P0601DS

Overview
H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.
1.
00 Aug.
05.
2003 com Features • Low on-resistance RDS(on) = 40 mΩ typ.
• Low drive current • 4.
5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1.
Gate 2.
Drain 3.
Source 4.
Drain Rev.
1.
00, Aug.
05.
2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Note2 Note1 Rating –60 ±20 –20 –80 –20 –12 12.
3 25 150 –55 to +150 Unit V V A A A A...


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