BTA1210J3

CYStech Electronics Corp. PNP Epitaxial Planar Transistor Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 1/4 BTA1210J3 Description www.DataSheet4U.com The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BVCEO High DC current gain High current capability Monolithic construction with built-in base-emitter shunt resistors Equivalent Circuit BTA1210J3 C B Outline TO-252 E B：Base C：Collector E：Emitter B C E BTA1210J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) www.DataSheet4U.com Power Dissipation Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 2/4 Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits -120 -120 -5 -10 -15 (Note ) 1.75 20 83.3 6.25 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦350µs, Duty≦2%. Characteristics (Ta=25°C) Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -120 -120 -5 1 100 Typ. Max. -200 -200 -2 -2 -4 -4.5 -2.8 12 300 Unit V V V µA µA mA V V V V K pF Test Conditions IC=-1mA, IB=0 IC=-100µA, IE=0 IE=-1mA, IC=...