Document
BCR8KM-16LA
Triac
Medium Power Use
REJ03G0336-0100 Rev.1.00 Aug.20.2004
Features
• IT (RMS) : 8 A • VDRM : 800 V www.DataSheet4U.com • IFGTI , IRGTI, IRGTⅢ : 30 mA • Viso : 2000 V • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271
Outline
TO-220FN
2
1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
3
1 1 2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1
Note1
Symbol VDRM VDSM
Voltage class 16 800 960
Unit V V
Rev.1.00, Aug.20.2004, page 1 of 7
BCR8KM-16LA
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass www.DataSheet4U.com Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 8 80 26 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 89°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 — 3.6 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω
Gate trigger currentNote2
Gate non-trigger voltage Tj = 125°C, VD = 1/2 VDRM Thermal resistance Junction to caseNote3 Critical-rate of rise of off-state Tj = 125°C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4 A/ms 3. Peak off-state voltage VD = 400 V
Main Current Main Voltage (dv/dt)c
Rev.1.00, Aug.20.2004, page 2 of 7
BCR8KM-16LA
Performance Curves
Maximum On-State Characteristics
102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100
Rated Surge On-State Current
Surge On-State Current (A)
90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
On-State Current (.