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BB506M

Renesas Technology

Built in Biasing Circuit MOS FET IC UHF RF Amplifier


Description
BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mol...



Renesas Technology

BB506M

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