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BB504C

Part Number	BB504C
Manufacturer	Renesas Technology
Description	Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Published	Nov 19, 2008
Detailed Description	BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0836-0600 (Previous ADE-208-983D) Rev.6.00 Aug.10....
Datasheet	BB504C PDF File

Overview

BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0836-0600 (Previous ADE-208-983D) Rev.
6.
00 Aug.
10.
2005 Features com • Low • Built in Biasing Circuit; To reduce using parts cost & PC board space.
noise; NF = 1.
0 dB typ.
at f = 200 MHz, NF =1.
75 dB typ.
at f =900 MHz • High gain; PG = 30 dB typ.
at f = 200 MHz, PG = 22 dB typ.
at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode.
Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain Notes: 1.
Marking is “DS–”.
2.
BB504C is i...

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