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LH28F800BG-L

Sharp Electrionic Components

8 M-bit (512 kB x 16) SmartVoltage Flash Memory

LH28F800BG-L/BGH-L (FOR TSOP, CSP) LH28F800BG-L/BGH-L (FOR TSOP, CSP) DESCRIPTION The LH28F800BG-L/BGH-L flash memories...


Sharp Electrionic Components

LH28F800BG-L

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Description
LH28F800BG-L/BGH-L (FOR TSOP, CSP) LH28F800BG-L/BGH-L (FOR TSOP, CSP) DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F800BG-L/BGH-L offer two levels of protection : absolute protection with VPP at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their code security needs. 8 M-bit (512 kB x 16) SmartVoltage Flash Memories FEATURES SmartVoltage technology – 2.7 V, 3.3 V or 5 V VCC – 2.7 V, 3.3 V, 5 V or 12 V VPP High performance read access time LH28F800BG-L85/BGH-L85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/ 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V) LH28F800BG-L12/BGH-L12 – 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/ 150 ns (2.7 to 3.6 V) Enhanced automated suspend options – Word write sus...




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