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STU13NB60

STMicroelectronics
Part Number STU13NB60
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Nov 19, 2008
Detailed Description STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU13NB60 com s s s s s s ...
Datasheet PDF File STU13NB60 PDF File

STU13NB60
STU13NB60

Overview
STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU13NB60 com s s s s s s V DSS 600 V R DS(on) < 0.
45 Ω ID 12.
6 A TYPICAL RDS(on) = 0.
4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate...


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