STU11NC60

N-CHANNEL 600V - 0.48Ω - 11A Max220 PowerMesh™ II MOSFET TYPE STU11NC60 www.DataSheet4U.com s TYPICAL s s s s STU11NC60 VDSS 600V RDS(on) < 0.55Ω ID 11 A RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED Max220 1 2 3 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 11 8 44 160 1.28 4.5 –65 to 150 150 (1)ISD ≤11A, di/dt ≤100A/µ s, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/ °C V/ns °C °C ()Pulse width limited by safe operating area June 2000 1/8 STU11NC60 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Jun...