N-channel Power MOSFET
STW16NB60
N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET
TYPE STW16NB60
www.DataSheet4U.com s TYPICAL
s s s s
VDS...
Description
STW16NB60
N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET
TYPE STW16NB60
www.DataSheet4U.com s TYPICAL
s s s s
VDSS 600V
RDS(on) < 0.35 Ω
ID 16 A
RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 16 10 64 220 1.76 4 –65 to 150 150
(1)ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C °C
()Pulse width limited by safe operating area
April 2003
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ST...
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