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STF15NM60N Dataheets PDF



Part Number STF15NM60N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STF15NM60N DatasheetSTF15NM60N Datasheet (PDF)

STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω ID 1 3 3 12 STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 14A 14A 14A (1) 14A 14A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input cap.

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STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω ID 1 3 3 12 STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 14A 14A 14A (1) 14A 14A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Application ■ Switching applications Order codes Part number STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N Marking B15NM60N I15NM60N F15NM60N P15NM60N W15NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube May 2007 Rev 1 1/18 www.st.com 18 Contents STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 www.DataSheet4U.com 3 Test circuit ................................................ 9 4 5 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 600 ± 25 14 9 56 125 15 -2500 14 (1) 9(1) 56 (1) 30 Unit VDS www.DataSheet4U.com Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature V V A A A W V/ns V VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tj Tstg -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤14A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS Table 2. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead tempe.


STB15NM60N STF15NM60N STI15NM60N


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