N-CHANNEL MOSFET
STW54NK30Z
N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE STW54NK...
Description
STW54NK30Z
N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE STW54NK30Z
s s
Figure 1: Package
ID 54 A Pw 300 W
BVDSS 300 V
RDS(on) < 0.060 Ω
TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
TO-247
3 2 1
Figure 2: Internal Schematic Diagram
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING DC CHOPPERs s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
Table 2: Order Codes
SALES TYPE STW54NK30Z MARKING W54NK30Z PACKAGE TO-247 PACKAGING TUBE
Rev. 1 February 2005 1/10
STW54NK30Z
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1)
www.DataSheet4U.com
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Re...
Similar Datasheet