STB4NC60

N-CHANNEL 600V - 1.8Ω - 4.2A D2PAK PowerMesh™II MOSFET TYPE STB4NC60 www.DataSheet4U.com s TYPICAL s s s s STB4NC60 VDSS 600V RDS(on) < 2.2Ω ID 4.2A RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS s D2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 4.2 2.6 16.8 100 0.8 3.5 –65 to 150 Unit V V V A A A W W/°C V/ns °C ()Pulse width limited by safe operating area (1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. October 2001 1/9 okDatasheet.com - Free Datasheet Search Engine STB4NC60 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resis...