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STB4NB80

STMicroelectronics
Part Number STB4NB80
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Nov 18, 2008
Detailed Description ® STB4NB80 N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB80 STB4NB80FP ww...
Datasheet PDF File STB4NB80 PDF File

STB4NB80
STB4NB80


Overview
® STB4NB80 N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB80 STB4NB80FP www.
DataSheet4U.
com s s s s s V DSS 800 V 800 V R DS(on) 3.
3 Ω 3.
3 Ω ID 4A 4A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 D2PAK TO-263 (Suffix "T4") 3 12 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capa...



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