T810-xxxB ® T835-xxxB
FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4UH.coIGmH COMMUTATION TEC...
T810-xxxB ® T835-xxxB
FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4UH.coIGmH COMMUTATION TECHNOLOGY
HIGH ITSM CAPABILITY
HIGH PERFORMANCE TRIACS
A2
DESCRIPTION
The T810-xxxB and T835-xxxB series are using high performance TOPGLASS P
NPN technology. These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay).
A2 G
A1
DPAK (Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS)
ITSM
I2t dI/dt
Tstg Tj T
Parameter
RMS on-state current (360° conduction angle)
Non repetitive surge peak on-state current ( Tj initial = 25°C )
I2t value for fusing
Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/µs
Tc =110 °C
tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz
Non Repetitive
Storage temperature range Operating junction temperature range
Maximum temperature for soldering during 10 s
Value 8
85 80 32 20
100
- 40 to + 150 - 40 to + 125
260
Unit A
A
A2s A/µs
°C °C °C
Symbol
Parameter
VDRM VRRM
Repetitive peak off-state voltage Tj = 125 °C
T810-/T835-
400B 400
600B 600
Unit V
May 1998 Ed : 1A
1/5
T810-xxxB / T835-xxxB
THERMAL RESISTANCES
Symbol Rth (j-c) Rth (j-c) Rth (j-a)
Parameter Junction to case for DC Junction to case for AC 360° conduction angle ( F= 50 Hz) Junction to ambient (S = 0.5 cm2)
Value 2.1 1.6 70
Unit °C/W °C/W °C/W
GATE CHARACTERISTICS (maximum values)
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PG(AV) = 1...