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LH28F160S5H-L

Sharp Electrionic Components

16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are hig...


Sharp Electrionic Components

LH28F160S5H-L

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Description
LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160S5-L/S5H-L offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs. The LH28F160S5-L/S5H-L are conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface (CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer rates and minimize device and system-level implementation costs. 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming) High performance read access time LH28F160S5-L70 – 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V) LH28F160S5H-L70 – 70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F160...




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