ADVANCED INFORMATION
MX29L3211
32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns/120ns Fast pagemode access time: 50ns www.DataSheet4U.com Page access depth: 16 bytes/8 words Sector erase architecture - 32 equal sectors of 64K word...
