ADVANCED INFORMATION
MX29L1611G / MX29L1611*
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
FEATURES
3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns Fast page access time: 30ns (Only for 29L1611PC-90/ www.DataSheet4U.com 10/12) Sector erase architecture ...
